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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF247B VHF push-pull power MOS transistor
Product specification August 1994
Philips Semiconductors
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Withstands full load mismatch. APPLICATIONS * Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connection for the transistor. PINNING - SOT262A1 PIN 1 2 3 4 5 DESCRIPTION drain 1 drain 2 gate 1 gate 2 source Fig.1 Simplified outline and symbol.
5 3
Top view
BLF247B
PIN CONFIGURATION
1
2 d g s g 5 4
MAM098
d
CAUTION The device is supplied in a antistatic package. The gate-source input must be protected against static charge during transport or handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 225 VDS (V) 28 PL (W) 150 Gp (dB) 12 D (%) 55
August 1994
2
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor section VDS VGS ID Ptot Tstg Tj drain-source voltage (DC) gate-source voltage drain current (DC) total power dissipation storage temperature operating junction temperature up to Tmb = 25 C; total device; both sections equally loaded - - - - -65 - PARAMETER CONDITIONS MIN.
BLF247B
MAX.
UNIT
65 20 13 280 +150 +200
V V A W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base CONDITIONS VALUE UNIT K/W K/W
total device; both sections equally 0.63 loaded
thermal resistance from mounting base total device; both sections equally 0.15 to heatsink loaded
10 2
MBD287
400 Ptot (W)
MBD288
ID (A) (1) 10 (2)
300 (2)
200 (1)
100
1 1 10 V DS (V)
0 10 2 0 40 80 120 Th ( o C) 160
Total device; both sections equally loaded. (1) Current in this area may be limited by RDSon. (2) Tmb = 25 C.
Total device; both sections equally loaded. (1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
August 1994
3
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - - - - 4.2 0.2 22 225 180 25 TYP.
BLF247B
MAX. - 2.5 1 4.5 - 0.3 - - - -
UNIT
Per transistor section V(BR)DSS IDSS IGSS VGSth gfs RDSon IDSX Cis Cos Crs drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance drain cut-off current input capacitance output capacitance reverse transfer capacitance ID = 50 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 5 A; VGS = 10 V ID = 5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz 65 - - 2 3 - - - - - V mA A V S A pF pF pF
handbook, halfpage
1
MBD298
40 ID (A) 30
MBD299
TC (mV/K) 0
1
2
20
3
10
4
5 2 10
10
1
1
I D (A)
10
0 0 5 10 15 V GS (V) 20
VDS = 10 V. VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values per section.
Fig.5
Drain current as a function of gate-source voltage, typical values per section.
August 1994
4
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
handbook, halfpage
400
MBD297
800 C (pF) 600 C os
MRA930
RDSon () 300
200
400
C is 100 200
0 0 50 100 T j ( C)
o
0 150 0 10 20 30 40 VDS (V)
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values per section.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values per section.
300 C rs (pF) 200
MBD296
100
0 0 10 20 30 40 VDS (V)
VGS = 0; f = 1 MHz.
Fig.8
Reverse transfer capacitance as a function of drain-source voltage, typical values per section.
August 1994
5
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
APPLICATION INFORMATION RF performance in a push-pull, common source, class-B test circuit: Th = 25 C; Rth mb-h = 0.15 K/W. MODE OF OPERATION CW, class-B f (MHz) 225 VDS (V) 28 IDQ (mA) 2 x 100 PL (W) 150 Gp (dB) 12 typ. 13.5
BLF247B
D (%) 55 typ. 70
Ruggedness in class-B operation The BLF247B is capable of withstanding a full load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 175 MHz; Th = 25 C; PL = 150 W; Rth mb-h = 0.15 K/W.
handbook, halfpage
20 Gp 16
MBD289
100 (%) 80
handbook, halfpage
300
MBD290
(dB)
PL (W) 200
12
Gp
60
8
40
100
4
20
0
0
50
100
150
0 200 250 P L (W)
0 0 10 20 Pi (W) 30
Class-B operation. VDS = 28 V. IDQ = 2 x 100 mA. ZL = 1.3 + j0.6 per section. f = 225 MHz.
Class-B operation. VDS = 28 V. IDQ = 2 x 100 mA. ZL = 1.3 + j0.6 per section. f = 225 MHz.
Fig.9
Power gain and efficiency as functions of load power; typical values.
Fig.10 Load power as a function of input power; typical values.
August 1994
6
Product specification
BLF247B
Fig.11 Test circuit for Class-B operation at 225 MHz.
handbook, full pagewidth
August 1994
V DD1 C21 C12 R1 C8 A R2 C9 C23 R3 L4 L8 L12 L22 L25 L18 L20 L10 DUT C19 L24 L6 L15 R8 L14 C22 C4 C6 C7 C5 C15 C17 C14 L26 C20 C16 C18
Philips Semiconductors
L1
C1
VHF push-pull power MOS transistor
50 input
L2
50 output
L3 L5 L9 L13 L23 L16 C24 L21 R4 C10 L11 L19 L7
C3
7
A R5 C11 C28 IC1 R6 C29 C27 C13 C26 R9 L17 C25 V DD2
C2
MBD294
VDD1
R7
C30
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
List of components (see Figs 11 and 12) COMPONENT C1, C2 C3 C4, C6, C18 C5 C7 C8, C11, C12, C13, C27 C9, C10 C14 C15 C16 C17 C19, C20 C21, C26, C29, C30 C23, C24 L1, L3, L24, L26 L2, L25 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 semi-rigid cable; note 3 VALUE 200 pF 27 pF 2 to 9 pF 39 pF 91 pF 100 nF; 50 V 2 x 1 nF in parallel 2 x 36 pF in parallel 18 pF 2 to 18 pF 6.8 pF 47 pF 1 nF 10 F; 63 V 2 x 470 nF in parallel 50 50 length 80 mm width 4.8 mm ext. conductor: length 80 mm diameter 3.6 mm length 30 mm width 6 mm length 10 mm width 6 mm length 2 mm width 6 mm length 4 mm width 6 mm length 10 mm width 6 mm DIMENSION
BLF247B
CATALOGUE NO.
2222 809 09005
2222 852 47104
2222 809 09006
C22, C25, C28 electrolytic capacitor
2222 030 38109
L4, L5 L6, L7 L8, L9 L10, L11 L12, L13 L14, L17
stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 Ferroxcube grade 3B wideband HF choke
43 43 43 43 43 2 in parallel
4312 02036642
August 1994
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Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
COMPONENT L15, L16
DESCRIPTION 3 turns enamelled 1.6 mm copper wire stripline; note 2 stripline; note 2 stripline; note 2 10 turns potentiometer metal film resistor metal film resistor voltage regulator 50 nH
VALUE
DIMENSION length 7.8 mm internal diameter 6 mm leads 2 x 10 mm length 6 mm width 6 mm length 15 mm width 6 mm length 26.5 mm width 6 mm
CATALOGUE NO.
L18, L19 L20, L21 L22, L23 R1, R6 R7 R8, R9 IC1 Notes
43 43 43 50 k 1 k; 0.4 W 5.11 k; 1 W 10 ; 1 W
R2, R3, R4, R5 metal film resistor
78L05
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board with glass microfibre PTFE dielectric (r = 2.2); thickness 116 inch; thickness of the copper sheet 2 x 35 m. 3. Semi-rigid cables L2 and L25 are soldered onto striplines L1 and L26.
handbook, full pagewidth
VDD1 L1 L2
119 R7 IC1 to R1, R6 C29 slider R1 C9 R2 C8 R3 C1 L4 C3 C4 L5 L6 C5 C6 C7 L7 R4 C11 L16 R5 L17 R9 C24 L17 C26 C13 C25 VDD2 L8 L10 L12 L18 L20 C14 C15 L11 L13 L19 L21 L9 C19 L22 C17 L23 C18 C20 BLF247B C30 C28 C27 C23 L14 R8 L14 L15 VDD1 C21 C12 C22
130
L24
100
C2
slider R6 C10 L3
L25 L26
MBD295
Dimensions in mm. The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 225 MHz class-B test circuit.
August 1994
9
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
BLF247B
4 Zi () 0
MBD291
6 ZL () 4
MBD293
ri
RL
xi 4
2 8 XL
12 0 100 200 f (MHz) 300
0 0 100 200 f (MHz) 300
VDS = 28 V. IDQ = 2 x 100 mA. Th = 25 C. PL = 150 W (total device).
VDS = 28 V. IDQ = 2 x 100 mA. Th = 25 C. PL = 150 W (total device).
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values per section.
handbook, halfpage
40
MBD292
Gp (dB) 30
20
handbook, halfpage
10
Zi
ZL
MBA379
0 0 100 200 f (MHz) 300
VDS = 28 V. IDQ = 2 x 100 mA. Th = 25 C. PL = 150 W (total device).
Fig.15 Definition of MOS impedances.
Fig.16 Power gain as a function of frequency, typical values per section.
August 1994
10
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
PACKAGE OUTLINE
BLF247B
0.25 11 max 0.13 2.92 2.29 1.02 21.85 seating plane 1.65 5.8 max 11 max
0.25 M 5.9 5.5 (4x) 2.54 1 2
10.4 max 5 3 5.525 11.05 27.94 34.3 max 4
3.3 9.8 15.6 3.0 max
MSA285 - 2
Dimensions in mm.
Fig.17 SOT262A1.
August 1994
11
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF247B
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1994
12
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF247B
August 1994
13
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF247B
August 1994
14
Philips Semiconductors
Product specification
VHF push-pull power MOS transistor
NOTES
BLF247B
August 1994
15
Philips Semiconductors - a worldwide company
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Printed in The Netherlands
846915/1500/01/pp16 Document order number: Date of release: August 1994 9397 738 40011
Philips Semiconductors

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